APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 1-8 all ratings @ t j = 25c unless otherwise specified these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com v dss = 1200v r dson = 33m max @ tj = 25c i d = 78a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? sic power mosfet - high speed switching - low r ds(on) - ultra low loss ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? very low stray inductance ? kelvin source for easy drive ? internal thermistor for temperature monitoring ? high level of integration ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant triple phase leg s ic mosfet power modul e downloaded from: http:///
APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 2-8 absolute maximum ratings (per sic mosfet) electrical characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v , v ds = 1200v 300 a r ds(on) drain C source on resistance v gs = 20v i d = 60a t j = 25c 27 33 m t j = 150c 50 70 v gs ( th ) gate threshold voltage v gs = v ds , i d = 3ma 1.7 2.2 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 750 na dynamic characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 1000v f = 1mhz 2.85 nf c oss output capacitance 0.24 c rss reverse transfer capacitance 0.02 q g total gate charge v gs = 0/20v v bus = 800v i d = 60a 148 nc q gs gate C source charge 32 q g d gate C drain charge 54 t d(on) turn-on delay time v gs = -5/+20v v bus = 800v i d =60a , t j =150c r l = 13 ? ; r gext = 16.7 20 ns t r rise time 20 t d(off) turn-off delay time 75 t f fall time 35 e on turn on energy inductive switching v gs = -5/+20v v bus = 600v i d = 60a r gext = 16.7 t j = 150c 1.3 mj e off turn off energy t j = 150c 0.7 r gint internal gate resistance 3.2 r thjc junction to case thermal resistance 0.34 c/w source - drain diode ratings and characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit v sd diode forward voltage v gs = -5v, i sd = 30a 3.3 v v gs = -2v, i sd = 30a 3.1 t rr reverse recovery time i sd = 60a ; v gs = -5v v r = 800v ; di f /dt = 1000a/s 40 ns q rr reverse recovery charge 415 nc i rr reverse recovery current 20 a symbol parameter max ratings unit v dss drain - source voltage 1200 v i d continuous drain current t c = 25c 78 a t c = 80c 58 i dm pulsed drain current 155 v gs gate - source voltage -10/25v v r dson drain - source on resistance 33 m p d maximum power dissipation t c = 25c 370 w downloaded from: http:///
APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 3-8 sic schottky diode rati ngs and characteristics (per sic diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 1200 v i rrm reverse leakage current v r =1200v t j = 25c 100 600 a t j = 175c 170 3000 i f dc forward current tc = 125c 30 a v f diode forward voltage i f = 30a t j = 25c 1.6 1.8 v t j = 175c 2.3 3 q c total capacitive charge i f = 30a, v r = 1200v di/dt =1200a/s 240 nc c total capacitance f = 1mhz, v r = 200v 288 pf f = 1mhz, v r = 400v 207 r thjc junction to case thermal resistance 0.37 c/w temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range sic mosfet -40 150 c sic diode -40 175 t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m wt package weight 250 g t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 4-8 package outline (dimensions in mm) see application note 1902 - mounting instructions for sp6-p (12mm) power modules on www.microsemi.com downloaded from: http:///
APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 5-8 typical sic mosfet performance curve v gs =16v v gs =18v v gs =20v 0 15 30 45 60 75 90 105 120 012345 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =25c v gs =20v v gs =16v v gs =18v 0 15 30 45 60 75 90 105 120 0123456789 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =1 50 c 0.75 1 1.25 1.5 1.75 2 25 50 75 100 125 150 t j , junction temperature (c) normalized r ds(on) vs. temperature r dson , drain source on resistance v gs =20v i d =60a t j =25c t j =150c 0 15 30 45 60 75 90 105 120 24681 01 2 i ds , drain source current (a) v gs , gate source voltage (v) transfert characteristics d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse dur ation eon eoff 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 153045607590105120 switching energy (mj) drain current (a) inductive switching energy vs current v gs =-5/20v r g = 16.7 ? v bus = 600v t j = 150 c eon eoff 0.5 0.7 0.9 1.1 1.3 1.5 15 17.5 20 22.5 25 27.5 30 switching energy (mj) gate resistance (ohms) inductive switching energy vs rg v gs =-5/20v i d = 60a v bus = 600v t j = 150 c downloaded from: http:///
APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 6-8 ciss crss coss 10 100 1000 10000 0 200 400 600 800 1000 c, capacitance (pf) v ds , drain source voltage (v) capacitance vs drain source voltage 0 4 8 12 16 20 0 30 60 90 120 150 v gs , gate source voltage (v) gate charge (nc) gate charge vs gate source voltage t j = 25 c i d = 60a v ds = 800v zcs hard switching zvs 0 100 200 300 400 500 600 15 30 45 60 75 90 frequency (khz) i d , drain current (a) operating frequency vs drain current v bus =600v d=50% r g =16.7 ? t j =1 50 c t c =75 c v gs =0v v gs =5v v gs =15v v gs =20v 0 15 30 45 60 75 90 105 120 00.511.522.533.544.5 i sd , source drain current (a) v sd , source drain voltage (v) output characteristics t j =25c v gs =-2v v gs =0v v gs =-5v 0 15 30 45 60 75 90 105 120 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i sd , body diode current (a) v sd , source drain voltage (v) body diode characteristics t j =25c v gs =-2v v gs =0v v gs =-5v 0 15 30 45 60 75 90 105 120 0.5 1 1.5 2 2.5 3 3.5 4 i sd , body diode current (a) v sd , source drain voltage (v) body diode characteristics t j =150c v gs =0v v gs =5v v gs =15v v gs =20v 0 15 30 45 60 75 90 105 120 0 0.5 1 1.5 2 2.5 3 3.5 4 i sd , source drain current (a) v sd , source drain voltage (v) output characteristics t j =150c downloaded from: http:///
APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 7-8 typical sic diode performance curve d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse dur ation t j =25c t j =125c t j =175c 0 10 20 30 40 50 60 00.511.522.533.544.5 i f forward current (a) v f forward voltage (v) forward characteristics t j =25c t j =125c t j =175c 0 90 180 270 360 450 400 600 800 1000 1200 1400 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 1 10 100 1000 c, capacitance (nf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
APTMC120TAM33CTPAG APTMC120TAM33CTPAG C rev 0 may, 2014 www.microsemi.com 8-8 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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